|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
IGBT with Diode Combi Pack Short Circuit SOA Capability IXSN 52N60AU1 VCES IC25 VCE(sat) 3 2 = 600 V = 80 A = 3V 4 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C 50/60 Hz IISOL 1 mA t = 1 min t=1s Maximum Ratings 600 600 20 30 80 40 160 ICM = 80 @ 0.8 VCES 10 250 2500 3000 -55 ... +150 150 -55 ... +150 V A V V A A A A ms W V~ V~ C C C miniBLOC, SOT-227 B 1 2 4 3 1 = Emitter , 2 = Gate, 3 = Collector 4 = Emitter Either Emitter terminal can be used as Main or Kelvin Emitter Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features * International standard package miniBLOC * Aluminium-nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Low VCE(sat) - for minimum on-state conduction losses * Fast Recovery Epitaxial Diode - short trr and IRM * Low collector-to-case capacitance (< 50 pF) - reducesd RFI * Low package inductance (< 10 nH) - easy to drive and to protect Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Space savings * Easy to mount with 2 screws * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 750 15 100 3 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 4 mA, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 92814H(5/97) (c) 2000 IXYS All rights reserved 1-5 IXSN52N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 23 4500 VCE = 25 V, VGE = 0 V, f = 1 MHz 400 90 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 88 70 220 200 200 3.5 70 220 4.7 450 340 6 600 250 60 120 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.50 K/W 0.05 K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 19 175 35 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C 50 0.80 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSN52N60AU1 Fig.1 Saturation Characteristics 80 TJ = 25C VGE = 15V 13V Fig.2 Output Characterstics 200 180 160 140 120 100 80 60 40 20 0 5 0 2 4 6 8 9V 7V 11V TJ = 25C VGE = 15V 70 60 IC - Amperes 50 40 30 20 10 9V 7V 0 0 1 2 3 4 IC - Amperes 11V 13V 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 TJ = 25C Fig.4 Temperature Dependence of Output Saturation Voltage 1.5 1.4 VGE=15V IC = 80A VCE(sat) - Normalized 1.3 1.2 1.1 1.0 0.9 IC = 20A IC = 40A VCE - Volts 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 IC = 20A IC = 40A IC = 80A 0.8 0.7 -50 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig.5 Input Admittance 80 VCE = 10V Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 BV / VGE(th) - Normalized 70 60 1.2 1.1 1.0 0.9 0.8 0.7 -50 BVCES IC = 3mA IC - Amperes 50 40 30 20 10 0 TJ = 125C TJ = - 40C TJ = 25C VGE8th) IC = 4mA 4 5 6 7 8 9 10 11 12 13 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C (c) 2000 IXYS All rights reserved 3-5 IXSN52N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 TJ = 125C RG = 10W Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 TJ = 125C 10 IC = 52A Eoff tfi - nanoseconds tfi - nanoseconds 750 Eoff 9 800 8 6 4 2 0 50 Eoff - millijoules 600 400 200 0 500 tfi 6 tfi 250 3 0 0 10 20 30 40 50 60 70 0 80 0 10 20 30 40 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 IC = 52A Fig.10 Turn-Off Safe Operating Area 1000 12 VCE = 480V 100 IC - Amperes VGE - Volts TJ = 125C 9 6 3 0 10 1 0.1 0.01 RG = 2.7W dV/dt < 6V/ns 0 50 100 150 200 250 0 100 200 300 400 500 600 700 Qg - nCoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W Diode 0.1 IGBT 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-5 Eoff - millijoules IXSN52N60AU1 Fig. 12 Forward current versus voltage drop. Fig. 13 Recovery charge versus -diF/dt. Fig. 14 Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16 Recovery time versus -diF/dt. Fig. 17 Peak forward voltage vs. diF/dt. Fig. 18 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 5-5 |
Price & Availability of IXSN52N60AU1 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |